Contact resistance and thermal degradation of metal-silicon contacts arechallenges in nanoscale CMOS as well as in power device applications. Titaniumsilicide (TiSi) contacts are commonly used metal-silicon contacts, but areknown to diffuse into the active region under high current stress. In thispaper we show that a graphenic carbon (C) contact deposited on n-type silicon(C-Si) by CVD, has the same low Schottky barrier height of 0.45 eV as TiSi, buta much improved reliability against high current stress. The C-Si contact isover 100 million times more stable against high current stress pulses than theconventionally used TiSi junction. The C-Si contact properties even showpromise to establish an ultra-low, high temperature stable contact resistance.The finding has important consequences for the enhancement of reliability inpower devices as well as in Schottky-diodes and electrical contacts to siliconin general.
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